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At GE Research, semiconductor engineers and physicists tackle the most challenging problems involved when developing commercial devices and systems by applying their expertise in semiconductor device physics, device process integration and device testing.

Our researchers are focused on Silicon Carbide (SiC) devices, including MOSFETs for power conversion, transient voltage suppressors for electronic protection, solid-state photomultipliers for UV detection, switches for pulsed power applications, or integrated circuits for harsh environments, and integrated radiation detector subsystems with applications in computer tomography, and positron emission tomography.​​ 


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Photograph of a silicon carbide power MOSFET wafer.



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Photograph of a high-temperature silicon carbide IC.


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