PROJECT

Medium-Voltage Silicon Carbide Super Junctions Transistors

Medium-Voltage Silicon Carbide Super Junctions Transistors

In this project, a team at GE Research plans to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.

Specific on-resistance of drift layer vs. breakdown for Si and SiC unipolar devices

 

Project Impact

The goal of this project is to develop and demonstrate high voltage SiC SJ MOSFETs that can provide breakthroughs in power conversion efficiency and system simplification across many MV applications including, renewables, utility grid-connected MVDC/HVDC, and converters used in the aviation and healthcare sectors.

Acknowledgment/Disclaimer: The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, advised by Program Director Isik Kizilyalli. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.
  • Our Expertise

    Capabilities utilized for Medium-Voltage Silicon Carbide Super Junctions Transistors project

  • Power Electronics

    Providing a breadth of power conversion and distribution solutions across the aviation, healthcare, energy and automotive sectors

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  • Semiconductors

    Developing world-class semiconductor and detector technologies that offer differentiation in applications ranging from power conversion to radiation detection

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  • Microfabrication

    Constructing micrometer structures in a world-class cleanroom staffed with experienced unit step leaders, engineers and technicians

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