Medium-Voltage Silicon Carbide Super Junctions Transistors
In this project, a team at GE Research plans to develop the world’s 1st high voltage SiC super junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET) that enables highly-efficient power conversion for next generation MVDC and HVDC grids as well as other applications in energy, aviation and healthcare.
The goal of this project is to develop and demonstrate high voltage SiC SJ MOSFETs that can provide breakthroughs in power conversion efficiency and system simplification across many MV applications including, renewables, utility grid-connected MVDC/HVDC, and converters used in the aviation and healthcare sectors.
Capabilities utilized for Medium-Voltage Silicon Carbide Super Junctions Transistors project
Providing a breadth of power conversion and distribution solutions across the aviation, healthcare, energy and automotive sectorsRead more
Developing world-class semiconductor and detector technologies that offer differentiation in applications ranging from power conversion to radiation detectionRead more
Constructing micrometer structures in a world-class cleanroom staffed with experienced unit step leaders, engineers and techniciansRead more