A critical technology gap towards realization of highly efficient, lightweight, multi-megawatt/multi-kilohertz power conversion systems is the availability of high-voltage (>10 kV) solid-state solutions capable of switching at high frequency (1-20 kHz) that are scalable to high currents (hundreds of amps). We are working on a disruptive new high-voltage solid-state switch based on silicon carbide super-junction, otherwise known as charge-balanced (SiC CB), technology. The new device architecture being developed at GE Research is designed to overcome the technological barriers of current medium and high voltage SiC devices and offer a paradigm shift in performance for power conversion applications, with up to 10× lower losses. This new device is expected to allow scaling to breakdown voltages up to 15 kV while offering the lowest on-state and switching losses compared with existing commercial silicon bipolar devices and competing SiC research approaches.
“The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DEAR0000674 advised by Program Director Isik Kizilyalli. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.”
CB devices are expected to enable highly efficient, medium voltage, multi-mega¬watt power conversion for conventional and renewable energy applications. GE Research has already demonstrated the world’s first 3kV charge-balance junction barrier schottky diode with a 1.5x improvement over the 4h-SiC unipolar limit.
Capabilities utilized for Charge-Balanced SiC FETs project
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