Reza Ghandi received a B.Sc. degree in electrical engineering from the University of Tehran, and M.Sc. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2007 and 2011, respectively. His doctoral work focused on fabrication technologies for efficient high-power Silicon Carbide bipolar transistors. In 2011, he joined GE Research in Niskayuna, NY, and is currently working on the development of high-voltage SiC switches and integrated circuits for high-power and high-temperature applications. He has more than 50 publications in peered reviewed journals and has been in leadership and technical support roles for several internal and external projects in high power and high temperature electronics, switches and sensors.
I am truly excited to work together with all the talented individuals here at GE Research - GE's innovation engine founded by Thomas Edison.
2005Electrical Engineering from University of Tehran
Master of Science in Nano-electronics from KTH, Royal Institute of Technology2007
2011PhD in Material and Applied Physics from KTH, Royal Institute of Technology
Joined GE Global Research center2011