Ljubisa Stevanovic is the Chief Engineer and CTO for Silicon Carbide (SiC) at GE Research. Exponential technologies have an impact that doubles every 18 to 36 months, and our focus is on finding ways to combine them to drive new business growth for GE.
Ljubisa has been with GE for 25 years. For the past 13 years, he has lead a multi-disciplinary team developing SiC power devices, advanced packaging, and power electronic applications. The team has commercialized SiC power MOSFETs with best-in-class performance, robustness, and reliability. The 1.2kV SiC MOSFET is the industry’s first product to pass the stringent AEC-Q101 automotive qualification standard at 200oC. His team has also developed vertically integrated chip-to-converter solutions to overcome obstacles to SiC product insertion. These solutions include low inductance power modules and robust gate drivers. Leveraging the SiC platform, GE has fielded converters for aerospace and industrial applications, including the world’s first MW-scale SiC inverter with 99% efficiency.
Ljubisa has co-authored over 50 peer reviewed publications and has 38 US patents. Ljubisa received the Diploma Engineer degree in Electrical Engineering from Belgrade University, Serbia, in 1988, and MS and PhD degrees in Power Electronics from Caltech in 1989 and 1995, respectively.