Juan Sabate

PhD, Power Electronics (Virginia Polytechnic Institute and State University) MS, Power Electronics (Virginia Polytechnic Institute and State University) BS, Electrical Engineering (Universitat Politecnica de Catalunya)

Juan Sabate leads a multidisciplinary team of scientists and engineers to develop new power electronics concepts for power supplies and high-power switching amplifiers for future generation of MRI drivers to improve performance, efficiency, and power density. The power conversion concepts are also applicable to aviation and renewables.

Juan has been at GE for 19 years, and in his most recent role as Senior Principal Engineer in the Electric Power organization, his current project – SiC technology to enable in-scan room power electronics – is poised to change MR, as it drastically simplifies and shortens installation time and will eliminate the equipment room. Juan plays the role of a mentor, coach, and guide, positively influencing scientists throughout the Global Research organization. He has contributed to new concepts for power supplies and high-power switching amplifiers for energy and medical applications.

Prior to GE Research, he worked for Philips Electronics Research in New York, from 1997 to 2000, where he conducted research and advanced development of high power-density power supplies for commercial and lighting applications. From 1994 to 1997, he worked for Hewlett-Packard R&D center in Barcelona (Spain), where he designed high power density dc-dc converters and special purpose sensors. Additionally, from 1994 to 1997 Juan  was a lecturer and Adjunct Professor in the Ramon Llull University (Spain).

Juan is IEEE senior member and Associate Editor of IEEE, holds 32 patents and more than 75 peer reviewed publications. As a power electronics and MRI gradient driver design expert, Juan is actively involved in the prestigious International Society for Magnetic Resonance in Medicine (ISMRM), and since 2010, has served as an instructor for their premier MR scientific education course. He holds an Electrical Engineering Diploma (‘82) from UPC; and M.S. ('88) Ph.D. (‘94) degrees from VA Tech.

Research is essential for competitivity. It keeps GE ahead of competition with technology and avoids missing new business opportunities.

  1. 1985
    First paper on an international conference. “Implementation of a Control and Monitoring System for Power Electronics.” 1st European Power Electronics Conference
  2. Fulbright scholarship for graduate studies
    1986
  3. 1993
    Ph.D. Graduation. Dissertation: "Zero-Voltage Switched Resonant and PWM Converters:Design-Oriented Analysis and Performance Evaluation"
  4. Power Electronics Designer for HP Barcelona Design Center
    1994
  5. 1994
    Stated teaching as associate professor for Ramon Llull University, Barcelona, Spain.
  6. Senior Member of Research Staff for Philips Research, NY
    1997
  7. 2000
    Senior Power Electronics Engineer for GE Global Research
  8. 1st research project transition to product. Juan’s XGD gradient driver powers approximately 500 of GE’s 1,200 MRI units, delivering $600 million in yearly revenue.
    2007
  9. 2011
    Principal Engineer for GE Global Research Center
  10. Senior Principal Engineer for GE Global Research Center
    2017

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