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GE Scientists Demonstrate Ultra-High Temperature SiC MOSFET Electronics


First believed SiC MOSFETs that can operate at temperatures exceeding 800 degrees C. New temperature tolerance threshold believed to set a record for MOSFET based electronics Could enable robust…

GE Research Awarded NASA Grant to Develop High Temperature Solutions to Enhance Missions to Venus


GE researchers applying novel silicon carbide (SiC) photodiode technology to develop and demonstrate a UV imager that reliably operates in hot and harsh environments of 500 degrees Celsius (932…